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P type has holes as majority carriers; N type has electrons.
It separates the conduction band from the valence band.
Conductors have overlapping bands; insulators have a large energy gap.
It behaves like an insulator due to filled valence and empty conduction bands.
The average velocity of charge carriers under an electric field.
It is pure and has equal numbers of electrons and holes.
It increases the number of charge carriers, enhancing conductivity.
It is formed by joining P type and N type semiconductors.
The potential barrier is reduced, allowing current to flow.
It increases the potential barrier, preventing current flow.
The minimum reverse voltage causing a sudden increase in current.
It is the forward voltage where current increases rapidly.
Majority carriers dominate current flow; minority carriers are less abundant.
It measures how quickly carriers move under an electric field.
It allows current to flow in reverse when a specific voltage is reached.
It is the current per unit area flowing through the material.
Conductivity increases due to more electrons crossing to the conduction band.
It is a region void of charge carriers, acting as a barrier.
Static resistance is for DC; dynamic resistance is for AC changes.
P type has holes as majority carriers; N type has electrons.
It separates the conduction band from the valence band.
Conductivity increases due to more electrons crossing to the conduction band.
Conductivity lies between conductors and insulators.
Conductors have overlapping bands; insulators have a large energy gap.
The average velocity of charge carriers under an electric field.
They increase the number of charge carriers.
The interface between p-type and n-type semiconductors.
The potential barrier is reduced, allowing current flow.
A region with no free charge carriers formed at the p-n junction.
It indicates the energy level where the probability of occupancy is 50%.
Intrinsic are pure; extrinsic have impurities added.
The potential barrier increases, preventing current flow.
The forward voltage where current starts increasing rapidly.
A sudden increase in reverse current due to high reverse bias.
They have excess electrons from pentavalent impurities.
They have excess holes from trivalent impurities.
Current is proportional to drift velocity and charge carrier density.
Current per unit cross-sectional area.
It is very large, preventing electron movement.
Mobility decreases with increasing temperature due to scattering.
P type has holes as majority carriers; N type has electrons.
It separates the conduction band from the valence band.
Conductivity increases due to more electrons crossing to the conduction band.
It has a small energy gap and can conduct under certain conditions.
Conductors have overlapping bands; insulators have a large energy gap.
It is the average velocity of charge carriers under an electric field.
They increase the number of charge carriers, altering conductivity.
It is formed by joining P type and N type semiconductors.
The potential barrier is reduced, allowing current to flow.
It increases the potential barrier, preventing current flow.
It acts as a barrier to further charge carrier movement.
It is the minimum reverse voltage causing a sudden increase in current.
It is the forward voltage where current starts increasing rapidly.
It is pure and has equal numbers of electrons and holes.
N-type has excess electrons; P-type has excess holes.
It is the maximum energy of free electrons at absolute zero.
It is the drift velocity per unit electric field strength.
High reverse bias causes a large increase in reverse current.
It is the current per unit cross-sectional area.
Current is proportional to the number of charge carriers and their drift velocity.
Holes act as positive charge carriers in the conduction process.